ds23007 rev. 8 - 2 1 of 2 mbr730-mbr760 www.diodes.com diodes incorporated mbr730 - mbr760 7.5a schottky barrier rectifier features l m a n p d e k c b j g r pin 1 + pin 1 pin 2 pin2- case + to-220ac dim min max a 14.22 15.88 b 9.65 10.67 c 2.54 3.43 d 5.84 6.86 e 6.35 g 12.70 14.73 j 0.51 1.14 k 3.53 4.09 l 3.56 4.83 m 1.14 1.40 n 0.30 0.64 p 2.03 2.92 r 4.83 5.33 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection application mechanical data case: molded plastic plastic material: ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: plated leads solderable per mil-std-202, method 208 polarity: see diagram weight: 2.3 grams (approx.) marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol mbr 730 mbr 735 mbr 740 mbr 745 mbr 750 mbr 760 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current (note 1) @ t c = 125 c i o 7.5 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 150 a forward voltage drop @ i f = 7.5a, t j = 25 c (note 3) @i f = 7.5a, t j = 125 c @i f = 15a, t j = 25 c @i f = 15a, t j = 125 c v fm 0.57 0.84 0.72 0.75 0.65 v peak reverse current @t j = 25 c at rated dc blocking voltage @ t j = 125 c i rm 0.1 15 0.5 50 ma typical total capacitance (note 2) c t 400 pf typical thermal resistance junction to case (note 1) r jc 3.5 c/w voltage rate of change (rated v r ) dv/dt 10,000 v/ s operating temperature range t j -55 to +150 c storage temperature range t stg -55 to +175 c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v dc. 3. short duration test pulse used to minimize self-heating effect.
ds23007 rev. 8 - 2 2 of 2 mbr730-mbr760 www.diodes.com 0.1 1.0 10 100 0.2 0.1 0.4 0.5 0.3 0.6 0.8 0.9 0.7 1.0 i , instantaneous fwd current (a) f v , instantaneous fwd voltage (v) f fi g . 2 t y p instantaneous fwd characteristics mbr750 - mbr760 mbr730 - mbr745 1 10 100 i , peak fwd surge current (a) fsm number of cycles at 60hz fi g . 3 max non-repetitive sur g e current 8.3 ms single half sine-wave (jedec method) 25 50 75 100 125 150 1 75 100 1000 4 000 1.0 10 c , capacitance (pf) t v , reverse voltage (v) r fi g . 4 t y pical total capacitance 100 0.1 f = 1.0mhz 0.001 0.01 0.1 1.0 0 20 40 60 80 100 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g .5 t y pical reverse characteristics t = 125 c j t = 75 c j t = 25 c j 10 resistive or inductive load 0 50 100 150 i , average fwd current (a) (av) t , case temperature ( c) c fig. 1 fwd current derating curve 0 2 4 6 8 10
|
